2SK2805 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 450 ± 30 ± 15 ± 60 80 (Tc = 25ºC) 550 15 150 –55 to +150 (Ta = 25ºC) External dimensions 2 ...... FM100 Electrical Characteristics Symbol V(BR) DSS I GSS I DSS A A W mJ A ºC ºC VTH Re (yfs) RDS (on) Ciss Coss Crss t d (on) tr t d (off) tf VSD 2.0 8.0 3.0 11.5 .
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2800 |
Hitachi Semiconductor |
Silicon N Channel MOS FET | |
2 | 2SK2802 |
Hitachi Semiconductor |
Silicon N Channel MOS FET | |
3 | 2SK2803 |
Sanken electric |
MOSFET | |
4 | 2SK2803 |
INCHANGE |
N-Channel MOSFET | |
5 | 2SK2804 |
Sanken electric |
MOSFET | |
6 | 2SK2806 |
Fuji Electric |
N-channel MOS-FET | |
7 | 2SK2806-01 |
Fuji Electric |
N-channel MOS-FET | |
8 | 2SK2807-01L |
Fuji Electric |
N-channel MOS-FET | |
9 | 2SK2807-01S |
Fuji Electric |
N-channel MOS-FET | |
10 | 2SK2808 |
Fuji Electric |
N-channel MOS-FET | |
11 | 2SK2808-01MR |
Fuji Electric |
N-channel MOS-FET | |
12 | 2SK2809 |
Fuji Electric |
N-channel MOS-FET |