2SK2865 - Toshiba Semiconductor

2SK2865 N-Channel MOSFET

2SK2865 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSV) 2SK2865 Chopper Regulator, DC/DC Converter and Motor Drive Applications • Low drain−source ON-resistance : RDS (ON) = 4.2 Ω (typ.) • High forward transfer admittance : |Yfs| = 1.7 S (typ.) • Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) • Enhancement mode : Vth = 2.

Features

PD EAS IAR EAR Tch Tstg 600 600 ±30 2 5 8 20 93 2 2 150 −55 to 150 V V V A A A W mJ A mJ °C °C 2.3 ± 0.15 2.3 ± 0.15 1. GATE 2. DRAIN （HEAT SINK） 3. SOURSE 2 1 3 JEDEC ― JEITA ― TOSHIBA 2-7J1B Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate.