Ordering number:EN5851 N Channel Silicon MOSFET 2SK2859 Ultrahigh-Speed Switching Applications Features · Low On resistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit:mm 2149 [2SA2859] 8 5 0.3 5.0 0.595 1.27 0.43 0.1 1.5 1.8max 1 4 0.2 1 : No Contact 2 : Source 3 : No Contact 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain S.
· Low On resistance.
· Ultrahigh-speed switching.
· 4V drive.
Package Dimensions
unit:mm 2149
[2SA2859]
8 5
0.3
5.0 0.595 1.27 0.43
0.1
1.5
1.8max
1
4
0.2
1 : No Contact 2 : Source 3 : No Contact 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8
4.4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Mounted on a ceramic board (10002×0.8mm) PW≤10µs, duty cycle≤1% Condition.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2850 |
INCHANGE |
N-Channel MOSFET | |
2 | 2SK2850-01 |
Fuji Electric |
N-Channel MOSFET | |
3 | 2SK2851 |
Hitachi Semiconductor |
N-Channel MOSFET | |
4 | 2SK2854 |
Toshiba Semiconductor |
N-Channel MOSFET | |
5 | 2SK2855 |
Toshiba Semiconductor |
N-Channel MOSFET | |
6 | 2SK2856 |
Toshiba Semiconductor |
N-Channel MOSFET | |
7 | 2SK2857 |
NEC |
N-Channel MOSFET | |
8 | 2SK2857 |
Kexin |
MOS Field Effect Transistor | |
9 | 2SK2857C |
Renesas |
N-CHANNEL MOSFET | |
10 | 2SK2858 |
NEC |
N-Channel MOSFET | |
11 | 2SK2800 |
Hitachi Semiconductor |
Silicon N Channel MOS FET | |
12 | 2SK2802 |
Hitachi Semiconductor |
Silicon N Channel MOS FET |