The 2SK2858 is a switching device which can be driven directly by a 2.5-V power source. The 2SK2858 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. PACKAGE DRAWING (Unit : mm) 0.3 +0.1 –0 2.1 ± 0.1 1.25 ± 0.1 0.65 0.65 • Can be driven by a 2.5-V power source • Low gate cut-off voltag.
2.0 ± 0.2 2 2SK2858 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL I DSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Ciss Coss Crss td(on) tr td(off) tf TEST CONDITIONS VDS = 30 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 3 V, ID = 10 µA VDS = 3 V, ID = 10 m A VGS = 2.5 V, ID = 1 m A VGS = 4 V, ID = 10 mA VGS = 10 V, ID = 1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2850 |
INCHANGE |
N-Channel MOSFET | |
2 | 2SK2850-01 |
Fuji Electric |
N-Channel MOSFET | |
3 | 2SK2851 |
Hitachi Semiconductor |
N-Channel MOSFET | |
4 | 2SK2854 |
Toshiba Semiconductor |
N-Channel MOSFET | |
5 | 2SK2855 |
Toshiba Semiconductor |
N-Channel MOSFET | |
6 | 2SK2856 |
Toshiba Semiconductor |
N-Channel MOSFET | |
7 | 2SK2857 |
NEC |
N-Channel MOSFET | |
8 | 2SK2857 |
Kexin |
MOS Field Effect Transistor | |
9 | 2SK2857C |
Renesas |
N-CHANNEL MOSFET | |
10 | 2SK2859 |
Sanyo Semicon Device |
N-Channel MOSFET | |
11 | 2SK2800 |
Hitachi Semiconductor |
Silicon N Channel MOS FET | |
12 | 2SK2802 |
Hitachi Semiconductor |
Silicon N Channel MOS FET |