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The 2SK2857 is a switching device which can be driven directly by a 5V power source. The 2SK2857 features a low on-state resistance and excellent Switching Characteristics, and is suitable for applications such as actuator driver. FEATURES • Can be driven by a 5V power source. • Low On-state resistance : RDS(on)1 = 220 mΩ MAX. (VGS = 4 V, ID = 1.5 A) RDS(on).
a low on-state resistance and excellent
Switching Characteristics, and is suitable for applications such as actuator driver.
FEATURES
• Can be driven by a 5V power source.
• Low On-state resistance :
RDS(on)1 = 220 mΩ MAX. (VGS = 4 V, ID = 1.5 A) RDS(on)2 = 150 mΩ MAX. (VGS = 10 V, ID = 2.5 A)
PACKAGE DRAWING (Unit : mm)
0.8MIN.
2.5±0.1 4.0±0.25
4.5±0.1 1.6±0.2
1 23
1.5±0.1
Electrode Connection
1.Souce 2.Drain 3.Gate
0.42 0.42±0.06
±0.06
1.5
0.47 ±0.06
3.0
0.41+0.03 -0.05
Marking : NX
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
60
Gate to Source Voltage
.
2SK2857 - Kexin
SMD Type MOS Field Effect Transistor 2SK2857 Features Can be driven by a 5V power source. Low On-state resistance : RD.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK2850 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | 2SK2850-01 |
Fuji Electric |
N-Channel MOSFET |
|
| 3 | 2SK2851 |
Hitachi Semiconductor |
N-Channel MOSFET |
|
| 4 | 2SK2854 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 5 | 2SK2855 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 6 | 2SK2856 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 7 | 2SK2857C |
Renesas |
N-CHANNEL MOSFET |
|
| 8 | 2SK2858 |
NEC |
N-Channel MOSFET |
|
| 9 | 2SK2859 |
Sanyo Semicon Device |
N-Channel MOSFET |
|
| 10 | 2SK2800 |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|
| 11 | 2SK2802 |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|
| 12 | 2SK2803 |
Sanken electric |
MOSFET |
|