2SK2857C - Renesas

2SK2857C N-CHANNEL MOSFET

The 2SK2857C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.0 V power source. Features  Directly driven by a 4.0 V power source.  Low on-state resistance RDS(on)1 = 105 m  MAX. (VGS = 10 V, ID = 2.0 A) RDS(on)2 = 150 m MAX. (VGS = 4.0 V, ID = 2.0 A) Ordering Information Part Number .

Features

 Directly driven by a 4.0 V power source.
 Low on-state resistance RDS(on)1 = 105 m  MAX. (VGS = 10 V, ID = 2.0 A) RDS(on)2 = 150 m MAX. (VGS = 4.0 V, ID = 2.0 A) Ordering Information Part Number Lead Plating Packing Package 2SK2857C-T1-AZ/AY -AZ : Sn-Bi , -AY : Pure Sn 1000p/Reel SC-62 (3p PoMM) Remark "-AZ/AY" indicates Pb-free. This product does not contain Pb in external electrode and other parts. Marking XB Absolute Maximum Ratings (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS Drain Current (DC) ID(DC) Drain Current (pu.