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2SK2431 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM D G 12 3 1. Gate 2. Drain 3. Source S 2SK2431 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltag.
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• Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter.
Outline
TO-220CFM
D G
12 3
1. Gate 2. Drain 3. Source
S
2SK2431
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)
* I DR Pch
* Tch Tstg
2 1
Ratings 450 ±30 3 12 3 25 150
–55 to +150
Unit.
2SK2431 - Inchange Semiconductor
·Drain Current ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variati.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK2430 |
Rohm |
Power MOSFET |
|
| 2 | 2SK2433 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 3 | 2SK2434 |
ETC |
Power MOSFET |
|
| 4 | 2SK240 |
Toshiba |
Silicon N-Channel Transistor |
|
| 5 | 2SK2400 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 6 | 2SK2401 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 7 | 2SK2401 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 8 | 2SK2402 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 9 | 2SK2405 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 10 | 2SK2406 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 11 | 2SK2407 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 12 | 2SK2408 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|