2SK2406 - Sanyo Semicon Device

2SK2406 N-Channel Silicon MOSFET

Ordering number : EN5251A 2SK2406 SANYO Semiconductors DATA SHEET 2SK2406 Features • Low ON-resistance. • Ultrahigh-speed switching. • High-speed diode. N-Channel Silicon MOSFET General-Purpose Switching Device Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Dra.

Features

• Low ON-resistance.
• Ultrahigh-speed switching.
• High-speed diode. N-Channel Silicon MOSFET General-Purpose Switching Device Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Volta.