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2SK2408 - Hitachi Semiconductor

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2SK2408 Silicon N-Channel MOSFET

2SK2408 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance Built-in fast recovery diode (trr = 120 ns typ) High speed switching Low drive current Suitable for switching regulator, Motor control Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK2408 Absolute Maximum Ratings (Ta = 2.

Features






• Low on-resistance Built-in fast recovery diode (trr = 120 ns typ) High speed switching Low drive current Suitable for switching regulator, Motor control Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK2408 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)
* I DR Pch
* Tch Tstg 2 1 Ratings 500 ±30.

The same part from a different manufacturer

Datasheet 2SK2408 - Renesas 2SK2408

2SK2408 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • Built-in fast re.

Datasheet 2SK2408 - Inchange Semiconductor 2SK2408

·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variati.

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