2SK240 - Toshiba

2SK240 Silicon N-Channel Transistor

: 2SK240 SILICON N CHANNEL JUNCTION TYPE LOW NOISE AUDIO AMPLIFIER APPLICATIONS. DIFFERENTIAL AMPLIFIER APPLICATIONS. FEATURES • Recommended for first stages of EQ Amplifiers. • High |y fs l : lyf s l=22mS(Typ.) (VDS =10V, VGS =0, I DS s=3mA) • Excellent Pair Characteristics : I VGS1 -VGS2 |=20mV (Max.) (VDS =10V, I D =lmA) • High Breakdown Voltage.

Features

• Recommended for first stages of EQ Amplifiers.
• High |y fs l : lyf s l=22mS(Typ.) (VDS =10V, VGS =0, I DS s=3mA)
• Excellent Pair Characteristics : I VGS1 -VGS2 |=20mV (Max.) (VDS =10V, I D =lmA)
• High Breakdown Voltage : 'GDS =-40V (Min.)
• Low Noise en =0.95nV//Hz (Typ.) (VDS =10V, lD=lmA, f=lkHz)
• High Input Impedance : lGSS="lnA(Max.) (vGS =-30V)
• Complementary to 2SJ75. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VGDS IG PD Ti Tstg RATING -40 10 400x2 125 -55^125.