·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage ±30 V ID D.
ss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance tr Rise Time td(on) Turn-on Delay Time tf Fall Time td(off) Turn-off Delay Time CONDITIONS VGS= 0; ID= 1mA VDS= 10V; ID=1mA IS=10A; VGS=0 VGS= 10V; ID= 6A VGS= ±30V;VDS= 0 VDS= 450V; VGS= 0 VDS=20V; VGS=0V; fT=1MHz VGS=10V; ID=5A; VDD=200V; RL=33.3Ω MIN TYPE MAX UNIT 450 V 2.0 3.0 V 1.5 V 0.55 0.75 Ω ±100 nA 1.0 mA 1500 75 pF 220 60 25 ns 60 230 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information cont.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK240 |
Toshiba |
Silicon N-Channel Transistor | |
2 | 2SK2400 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
3 | 2SK2401 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
4 | 2SK2401 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
5 | 2SK2402 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
6 | 2SK2405 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
7 | 2SK2406 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
8 | 2SK2408 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
9 | 2SK2408 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
10 | 2SK2408 |
Renesas |
Silicon N-Channel MOSFET | |
11 | 2SK2409 |
NEC |
SWITCHING N-CHANNEL POWER MOSFET | |
12 | 2SK241 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |