The 2SK2411 is N-Channel MOS Field Effect Transistor designed for high speed switching applications. 3.0 ±0.3 PACKAGE DIMENSIONS (in millimeter) 10.6 MAX. 10.0 5.9 MIN. 12.7 MIN. 15.5 MAX. 3.6 ±0.2 4.8 MAX. 1.3 ±0.2 FEATURES • Low On-Resistance RDS(on)1 = 40 mΩ MAX. (@ VGS = 10 V, ID = 15 A) RDS(on)2 = 60 mΩ MAX. (@ VGS = 4 V, ID = 15 A) 4 1.3 ±0.2 0.75.
• Low On-Resistance
RDS(on)1 = 40 mΩ MAX. (@ VGS = 10 V, ID = 15 A) RDS(on)2 = 60 mΩ MAX. (@ VGS = 4 V, ID = 15 A)
4 1.3 ±0.2 0.75 ±0.1 2.54 1 2 3
• Low Ciss Ciss = 1500 pF TYP.
• Built-in G-S Gate Protection Diodes
• High Avalanche Capability Ratings
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
6.0 MAX.
0.5 ±0.2 2.8 ±0.2
2.54 1. Gate 2. Drain 3. Source 4. Fin (Drain) JEDEC: TO-220AB
MP-25 (TO-220)
(10.0.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK241 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
2 | 2SK2410 |
NEC |
SWITCHING N-CHANNEL POWER MOSFET | |
3 | 2SK2411-Z |
NEC Electronics |
SWITCHING N-CHANNEL POWER MOSFET | |
4 | 2SK2412 |
NEC |
SWITCHING N-CHANNEL POWER MOSFET | |
5 | 2SK2413 |
NEC |
SWITCHING N-CHANNEL POWER MOSFET | |
6 | 2SK2414 |
NEC |
SWITCHING N-CHANNEL POWER MOSFET | |
7 | 2SK2414 |
Kexin |
MOS Field Effect Transistor | |
8 | 2SK2414-Z |
NEC |
SWITCHING N-CHANNEL POWER MOSFET | |
9 | 2SK2415 |
NEC |
SWITCHING N-CHANNEL POWER MOSFET | |
10 | 2SK2415-Z |
NEC |
SWITCHING N-CHANNEL POWER MOSFET | |
11 | 2SK2417 |
Toshiba Semiconductor |
N-Channel MOSFET | |
12 | 2SK2417 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |