The 2SK2359, 2SK2359-Z/2SK2360, 2SK2360-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching 3.0 ± 0.3 PACKAGE DIMENSIONS (in millimeters) 10.6 MAX. 3.6 ± 0.2 10.0 5.9 MIN. 12.7 MIN. 15.5 MAX. applications. 4.8 MAX. 1.3 ± 0.2 FEATURES • Low On-Resistance 2SK2359: RDS(on) = 0.9 Ω (VGS = 10 V, ID = 4.0 A) 2SK2360: RDS(on) = 1.0 Ω.
• Low On-Resistance
2SK2359: RDS(on) = 0.9 Ω (VGS = 10 V, ID = 4.0 A) 2SK2360: RDS(on) = 1.0 Ω (VGS = 10 V, ID = 4.0 A)
4 1 2 3
6.0 MAX.
• Low Ciss Ciss = 1050 pF TYP.
• High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage(2SK2359/2SK2360) VDSS Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current
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* Single Avalanche Energy
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* PW ≤ 10 µs, Duty Cycle ≤ 1 % VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2350 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
2 | 2SK2350 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
3 | 2SK2351 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
4 | 2SK2352 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
5 | 2SK2352 |
Toshiba |
Silicon N-Channel MOSFET | |
6 | 2SK2353 |
NEC |
N-Channel MOSFET | |
7 | 2SK2354 |
NEC |
N-Channel MOSFET | |
8 | 2SK2355 |
NEC |
N-Channel MOSFET | |
9 | 2SK2355-Z |
NEC |
N-Channel MOSFET | |
10 | 2SK2356 |
NEC |
N-Channel MOSFET | |
11 | 2SK2356-Z |
NEC |
N-Channel MOSFET | |
12 | 2SK2357 |
NEC |
N-Channel MOSFET |