2SK2356 - NEC

2SK2356 N-Channel MOSFET

The 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. 3.0 ±0.3 PACKAGE DIMENSIONS (in millimeter) 10.6 MAX. 3.6 ±0.2 10.0 4.8 MAX. 1.3 ±0.2 5.9 MIN. 1 2 3 • Low On-Resistance 2SK2355: RDS(on) = 1.4 Ω (VGS = 10 V, ID = 2.5 A) 2SK2356: RDS(on) = 1.5 Ω (VGS = 10 V, ID = 2.5 A) 4 .

Features

6.0 MAX.
• Low Ciss Ciss = 670 pF TYP.
• High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage (2SK2355/2356) Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (Ta = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current
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* Single Avalanche Energy
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* PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 450/500 ±30 ± 5.0 ±20 50 1.5 150 5.0 17.4 V V A A W 1.3 ±0.2 0.75 ±0.1 2.54 0.5 ±0.2 2.8 ±0.2 2.54 1. Gate 2. Drain 3. Source 4.