·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching Regulators ·DC-DC Converter, ·Motor Control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Ga.
Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance tr Rise Time ton Turn-on Time tf Fall Time toff Turn-off Time CONDITIONS VGS= 0; ID= 10mA VDS= 10V; ID=1mA IS=6A ;VGS= 0 VGS= 10V; ID= 3A VGS= ±25V;VDS= 0 VDS= 600V; VGS= 0 VDS=10V; VGS=0V; fT=1MHz VGS=10V; ID=3A; VDD=300V; RL=100Ω MIN TYPE MAX UNIT 600 V 2.0 4.0 V 1.8 V 1.06 1.25 Ω ±10 µA .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2350 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
2 | 2SK2350 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
3 | 2SK2351 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
4 | 2SK2353 |
NEC |
N-Channel MOSFET | |
5 | 2SK2354 |
NEC |
N-Channel MOSFET | |
6 | 2SK2355 |
NEC |
N-Channel MOSFET | |
7 | 2SK2355-Z |
NEC |
N-Channel MOSFET | |
8 | 2SK2356 |
NEC |
N-Channel MOSFET | |
9 | 2SK2356-Z |
NEC |
N-Channel MOSFET | |
10 | 2SK2357 |
NEC |
N-Channel MOSFET | |
11 | 2SK2358 |
NEC |
N-Channel MOSFET | |
12 | 2SK2359 |
NEC |
N-Channel MOSFET |