2SK2357 - NEC

2SK2357 N-Channel MOSFET

The 2SK2357/2SK2358 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0 ±0.3 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2 FEATURES • Low On-Resistance 2SK2357: RDS(on) = 0.9 Ω (VGS = 10 V, ID = 3.0 A) 15.0 ±0.3 2SK2358: RDS(on) = 1.0 Ω (VGS = 10 V, ID = 3.0 A) • Low Ciss Ciss = 1050 pF TYP. •.

Features

• Low On-Resistance 2SK2357: RDS(on) = 0.9 Ω (VGS = 10 V, ID = 3.0 A) 15.0 ±0.3 2SK2358: RDS(on) = 1.0 Ω (VGS = 10 V, ID = 3.0 A)
• Low Ciss Ciss = 1050 pF TYP.
• High Avalanche Capability Ratings
• Isolate TO-220 Package ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (2SK2357/2358) Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (Ta = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current
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* Single Avalanche Energy
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* PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 .