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2SK2359 |
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| Part Number | 2SK2359 |
| Manufacturer | NEC |
| Description | The 2SK2359, 2SK2359-Z/2SK2360, 2SK2360-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching 3.0 ± 0.3 PACKAGE DIMENSIONS (in millimeters) 10.6 MAX. 3.6 ± 0.2 10.0 5.9 MIN. ... |
| Features |
• Low On-Resistance 2SK2359: RDS(on) = 0.9 Ω (VGS = 10 V, ID = 4.0 A) 2SK2360: RDS(on) = 1.0 Ω (VGS = 10 V, ID = 4.0 A) 4 1 2 3 6.0 MAX. • Low Ciss Ciss = 1050 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage(2SK2359/2SK2360) VDSS Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS... |
| Document |
 2SK2359 Data Sheet
PDF 122.21KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK2350 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 2 | 2SK2350 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | 2SK2351 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | 2SK2352 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | 2SK2352 |
Toshiba |
Silicon N-Channel MOSFET |
|