2SK2225 Silicon N-Channel MOS FET ADE-208-140 1st. Edition Application High speed power switching Features • • • • • High breakdown voltage (VDSS = 1500 V) High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2225 Absolute Maximum .
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• High breakdown voltage (VDSS = 1500 V) High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter
Outline
TO-3PFM
D G
1
2
3
S
1. Gate 2. Drain 3. Source
2SK2225
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)
* I DR Pch
* Tch Tstg
2 1
Ratings 1500 ±20 2 7 2 50 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK222 |
Sanyo Semicon Device |
N-Channel Junction Silicon FET | |
2 | 2SK2220 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
3 | 2SK2220 |
Renesas |
Silicon N-Channel MOSFET | |
4 | 2SK2221 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
5 | 2SK2221 |
Renesas |
Silicon N-Channel MOSFET | |
6 | 2SK2221 |
INCHANGE |
N-Channel MOSFET | |
7 | 2SK2222 |
ETC |
N-Channel Transistor | |
8 | 2SK2223-01 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
9 | 2SK2223-01R |
Fuji Electric |
N-channel MOS-FET | |
10 | 2SK2224-01 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
11 | 2SK2224-01R |
Fuji Electric |
N-channel MOS-FET | |
12 | 2SK2225-80-E |
Renesas |
High Speed Power Switching MOSFET |