2SK2224-01R FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 900V 4Ω 3A 50W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Abso.
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 900V 4Ω 3A 50W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2224-01 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
2 | 2SK222 |
Sanyo Semicon Device |
N-Channel Junction Silicon FET | |
3 | 2SK2220 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
4 | 2SK2220 |
Renesas |
Silicon N-Channel MOSFET | |
5 | 2SK2221 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
6 | 2SK2221 |
Renesas |
Silicon N-Channel MOSFET | |
7 | 2SK2221 |
INCHANGE |
N-Channel MOSFET | |
8 | 2SK2222 |
ETC |
N-Channel Transistor | |
9 | 2SK2223-01 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
10 | 2SK2223-01R |
Fuji Electric |
N-channel MOS-FET | |
11 | 2SK2225 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
12 | 2SK2225 |
Renesas Technology |
Silicon N-Channel MOSFET |