·Drain Current ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·UPS ·DC-DC converters ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (V.
SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance tr Rise Time td(on) Turn-on Delay Time tf Fall Time td(off) Turn-off Delay Time CONDITIONS VGS= 0; ID= 1mA VDS= VGS; ID=1mA IF=2 IDR ;VGS= 0 VGS= 10V; ID= 1.5A VGS= ±30V;VDS= 0 VDS= 900V; VGS= 0 VDS=25V; VGS=0V; fT=1MHz VGS=10V; ID=3A; VDD=600V; RGS=10Ω MIN TYPE MAX UNIT 900 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2224-01R |
Fuji Electric |
N-channel MOS-FET | |
2 | 2SK222 |
Sanyo Semicon Device |
N-Channel Junction Silicon FET | |
3 | 2SK2220 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
4 | 2SK2220 |
Renesas |
Silicon N-Channel MOSFET | |
5 | 2SK2221 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
6 | 2SK2221 |
Renesas |
Silicon N-Channel MOSFET | |
7 | 2SK2221 |
INCHANGE |
N-Channel MOSFET | |
8 | 2SK2222 |
ETC |
N-Channel Transistor | |
9 | 2SK2223-01 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
10 | 2SK2223-01R |
Fuji Electric |
N-channel MOS-FET | |
11 | 2SK2225 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
12 | 2SK2225 |
Renesas Technology |
Silicon N-Channel MOSFET |