Ordering number:EN3467 Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon MOSFET 2SK1464 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2076B [2SK1464] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 2.8 2.0 1.0 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-t.
· Low ON-state resistance.
· Ultrahigh-speed switching.
· Converters.
N-Channel Silicon MOSFET
2SK1464
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm 2076B
[2SK1464]
16.0 3.4
5.6 3.1
5.0 8.0 22.0
2.0
21.0 4.0
2.8 2.0
1.0
123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
5.45
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
Electrical Characteristics at Ta .
·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=900 (Min) ·Minimum Lot-to-Lot variations for robust device p.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK146 |
Toshiba |
Silicon N-Channel Transistor | |
2 | 2SK1460 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
3 | 2SK1460 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
4 | 2SK1460LS |
Sanyo Semiconductor Corporation |
N-Channel Silicon MOSFET | |
5 | 2SK1461 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
6 | 2SK1461 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
7 | 2SK1462 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
8 | 2SK1462 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
9 | 2SK1463 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
10 | 2SK1463 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
11 | 2SK1465 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
12 | 2SK1465 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |