2SK1464 |
Part Number | 2SK1464 |
Manufacturer | Inchange Semiconductor |
Description | ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=900 (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high vo... |
Features |
ce On-stage Resistance VGS=10V; ID=4A
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=900V; VGS= 0
VSD
Diode Forward Voltage
IF=8A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=4A;RL=50Ω
toff
Turn-off time
2SK1464
MIN TYP MAX UNIT
900
V
2.0
3.0
V
1.2
1.6
Ω
±100 nA
1
mA
1.8
V
80
ns
100
ns
150
ns
500
ns
Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applicati... |
Document |
2SK1464 Data Sheet
PDF 203.87KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SK146 |
Toshiba |
Silicon N-Channel Transistor | |
2 | 2SK1460 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
3 | 2SK1460 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
4 | 2SK1460LS |
Sanyo Semiconductor Corporation |
N-Channel Silicon MOSFET | |
5 | 2SK1461 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |