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Ordering number:EN3466 Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon MOSFET 2SK1463 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2076B [2SK1463] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 2.8 2.0 2.0 1.0 0.6 3.5 20.4 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Pa.
· Low ON-state resistance.
· Ultrahigh-speed switching.
· Converters.
N-Channel Silicon MOSFET
2SK1463
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm 2076B
[2SK1463]
16.0 3.4
5.6 3.1
5.0 8.0 22.0
2.0
21.0 4.0
2.8 2.0 2.0 1.0
0.6
3.5 20.4
123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
5.45
5.45
1 : Gate 2 .
2SK1463 - Inchange Semiconductor
·Drain Current –ID=4.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=900 (Min) ·Minimum Lot-to-Lot variations for robust device.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK146 |
Toshiba |
Silicon N-Channel Transistor |
|
| 2 | 2SK1460 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 3 | 2SK1460 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | 2SK1460LS |
Sanyo Semiconductor Corporation |
N-Channel Silicon MOSFET |
|
| 5 | 2SK1461 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 6 | 2SK1461 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 7 | 2SK1462 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 8 | 2SK1462 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 9 | 2SK1464 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 10 | 2SK1464 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 11 | 2SK1465 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 12 | 2SK1465 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|