·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=900 (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta.
rce On-stage Resistance VGS=10V; ID=4A IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=900V; VGS= 0 VSD Diode Forward Voltage IF=8A; VGS=0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=4A;RL=50Ω toff Turn-off time 2SK1465 MIN TYP MAX UNIT 900 V 2.0 3.0 V 1.2 1.6 Ω ±100 nA 1 mA 1.8 V 80 ns 100 ns 150 ns 500 ns Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applicat.
Ordering number:EN3468 Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK146 |
Toshiba |
Silicon N-Channel Transistor | |
2 | 2SK1460 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
3 | 2SK1460 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
4 | 2SK1460LS |
Sanyo Semiconductor Corporation |
N-Channel Silicon MOSFET | |
5 | 2SK1461 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
6 | 2SK1461 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
7 | 2SK1462 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
8 | 2SK1462 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
9 | 2SK1463 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
10 | 2SK1463 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
11 | 2SK1464 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
12 | 2SK1464 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |