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Ordering number:EN3464 Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon MOSFET 2SK1461 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2056A [2SK1461] 15.6 3.2 14.0 4.8 2.0 1.3 1.2 3.5 15.0 20.0 2.6 1.6 2.0 1.0 123 0.6 1.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Paramete.
· Low ON-state resistance.
· Ultrahigh-speed switching.
· Converters.
N-Channel Silicon MOSFET
2SK1461
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2056A
[2SK1461]
15.6 3.2 14.0
4.8 2.0
1.3 1.2 3.5 15.0 20.0
2.6
1.6 2.0
1.0 123 0.6
1.4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
5.45
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
5.45
20.0
0.6
1 : Gate.
2SK1461 - Inchange Semiconductor
·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=900 (Min) ·Minimum Lot-to-Lot variations for robust device p.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK146 |
Toshiba |
Silicon N-Channel Transistor |
|
| 2 | 2SK1460 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 3 | 2SK1460 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | 2SK1460LS |
Sanyo Semiconductor Corporation |
N-Channel Silicon MOSFET |
|
| 5 | 2SK1462 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 6 | 2SK1462 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 7 | 2SK1463 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 8 | 2SK1463 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 9 | 2SK1464 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 10 | 2SK1464 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 11 | 2SK1465 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 12 | 2SK1465 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|