2SK1358 - Toshiba Semiconductor

2SK1358 Silicon N-Channel MOSFET

TOSHIBA Discrete Semiconductors Field Effect Transistor Silicon N Channel MOS Type (π-MOS II.5) High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • Low Drain-Source ON Resistance - RDS(ON) = 1.1Ω (Typ.) • High Forward Transfer Admittance - Yfs = 4.0S (Typ.) • Low Leakage Current - IDSS = 300µA (Max.) @ VDS = 72.

Features

• Low Drain-Source ON Resistance - RDS(ON) = 1.1Ω (Typ.)
• High Forward Transfer Admittance - Yfs = 4.0S (Typ.)
• Low Leakage Current - IDSS = 300µA (Max.) @ VDS = 720V
• Enhancement-Mode - Vth = 1.5 ~ 3.5V @ VDS = 10V, ID = 1mA Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Drain-Gate Voltage (RGS = 20kΩ) Gate-Source Voltage Drain Current DC Pulse Drain Power Dissipation (Tc = 25°C) Channel Temperature Storage Temperature Range VDSS VDGR VGSS ID IDP PD 900 900 ±30 9 27 150 Tch 150 Tstg -55 ~ 150 UNIT V V V A W °C °C Thermal Characterist.