2SK1357 - Inchange Semiconductor

2SK1357 N-Channel MOSFET Transistor

·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source V.

Features

10mA VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=2A IGSS Gate Source Leakage Current VGS= ±25V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=720V; VGS= 0 VSD Diode Forward Voltage IF=5A; VGS=0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=2A;RL=200Ω toff Turn-off time MIN TYP MAX UNIT 900 V 1.5 3.5 V 2.5 2.8 Ω ±100 nA 300 uA 1.9 V 18 35 ns 30 60 ns 12 25 ns 70 140 ns Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notifica.