2SK1352 - Inchange Semiconductor

2SK1352 N-Channel MOSFET Transistor

·Drain Current –ID=7A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Ga.

Features

ID= 10mA VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=4A IGSS Gate Source Leakage Current VGS= ±25V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=500V; VGS= 0 VSD Diode Forward Voltage IF=7A; VGS=0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=4A;RL=50Ω toff Turn-off time 2SK1352 MIN TYP MAX UNIT 500 V 1.5 3.5 V 0.65 0.85 Ω ±100 nA 300 uA 2.0 V 7 15 ns 25 50 ns 15 30 ns 60 120 ns Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time with.