·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Ga.
rce Breakdown Voltage VGS=0; ID= 10mA 500 V VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA 1.5 3.5 V RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=2.5A 1.3 1.5 Ω IGSS Gate Source Leakage Current VGS= ±25V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=500V; VGS= 0 300 uA VSD Diode Forward Voltage IF=5A; VGS=0 2.0 V tr Rise time 15 30 ns ton Turn-on time tf Fall time VGS=10V;ID=2.5A;RL=90Ω 30 60 ns 15 30 ns toff Turn-off time 40 85 ns Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK135 |
![]() Hitachi Semiconductor |
Silicon N-Channel MOSFET |
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2 | 2SK1350 |
![]() Inchange Semiconductor |
N-Channel MOSFET Transistor |
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3 | 2SK1352 |
![]() Inchange Semiconductor |
N-Channel MOSFET Transistor |
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4 | 2SK1356 |
![]() Inchange Semiconductor |
N-Channel MOSFET Transistor |
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5 | 2SK1356 |
![]() Toshiba |
N-Channel MOSFET |
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6 | 2SK1357 |
![]() Inchange Semiconductor |
N-Channel MOSFET Transistor |
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7 | 2SK1357 |
![]() Toshiba |
Silicon N-Channel MOSFET |
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8 | 2SK1358 |
![]() Toshiba Semiconductor |
Silicon N-Channel MOSFET |
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9 | 2SK1358 |
![]() Inchange Semiconductor |
N-Channel MOSFET Transistor |
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10 | 2SK1359 |
![]() Toshiba Semiconductor |
Silicon N-Channel MOSFET |
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11 | 2SK1300 |
![]() Hitachi Semiconductor |
Silicon N-Channel MOSFET |
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12 | 2SK1300 |
![]() Renesas |
Silicon N-Channel MOSFET |
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