2SK1351 - Inchange Semiconductor

2SK1351 N-Channel MOSFET Transistor

·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Ga.

Features

rce Breakdown Voltage VGS=0; ID= 10mA 500 V VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA 1.5 3.5 V RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=2.5A 1.3 1.5 Ω IGSS Gate Source Leakage Current VGS= ±25V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=500V; VGS= 0 300 uA VSD Diode Forward Voltage IF=5A; VGS=0 2.0 V tr Rise time 15 30 ns ton Turn-on time tf Fall time VGS=10V;ID=2.5A;RL=90Ω 30 60 ns 15 30 ns toff Turn-off time 40 85 ns Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time .