2SJ549 - Hitachi Semiconductor

2SJ549 Silicon P-Channel MOSFET

2SJ549(L),2SJ549(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-644A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.11 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ549(L),2SJ549(S) Absolute Maximum Ratings (.

Features

• Low on-resistance R DS(on) = 0.11 Ω typ.
• Low drive current
• 4 V gete drive devices
• High speed switching Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ549(L),2SJ549(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings
  –60 ±20
  –12
  –48
  –12 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2
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