2SJ540 - Hitachi Semiconductor

2SJ540 Silicon P-Channel MOSFET

2SJ540 Silicon P Channel MOS FET High Speed Power Switching ADE-208-642A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.11 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SJ540 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source vol.

Features

• Low on-resistance R DS(on) = 0.11 Ω typ.
• Low drive current
• 4 V gete drive devices
• High speed switching Outline TO
  –220AB D G 1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SJ540 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings
  –60 ±20
  –12
  –48
  –12 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2
  –12 12 50 150
  –55 to +1.