2SJ549 |
Part Number | 2SJ549 |
Manufacturer | Hitachi Semiconductor |
Description | 2SJ549(L),2SJ549(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-644A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.11 Ω typ. • Low drive current • 4 V gete driv... |
Features |
• Low on-resistance R DS(on) = 0.11 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ549(L),2SJ549(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –12 –48 –12 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 –... |
Document |
2SJ549 Data Sheet
PDF 56.26KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SJ540 |
Hitachi Semiconductor |
Silicon P-Channel MOSFET | |
2 | 2SJ541 |
Hitachi Semiconductor |
Silicon P-Channel MOSFET | |
3 | 2SJ542 |
Hitachi Semiconductor |
Silicon P-Channel MOSFET | |
4 | 2SJ543 |
Hitachi Semiconductor |
Silicon P-Channel MOSFET | |
5 | 2SJ544 |
Hitachi Semiconductor |
Silicon P-Channel MOSFET |