2SJ547 - Hitachi Semiconductor

2SJ547 Silicon P-Channel MOSFET

2SJ547 Silicon P Channel MOS FET High Speed Power Switching ADE-208-658A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.16 Ω typ. • 4 V gete drive devices • High speed switching Outline TO–220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SJ547 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Dr.

Features

• Low on-resistance R DS(on) = 0.16 Ω typ.
• 4 V gete drive devices
• High speed switching Outline TO
  –220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SJ547 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings
  –60 ±20
  –10
  –40
  –10 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2
  –10 8.5 20 150
  –55 to +150 EAR Pch Tch Tstg 1. PW.