2SJ548 - Hitachi Semiconductor

2SJ548 Silicon P-Channel MOSFET

2SJ548 Silicon P Channel MOS FET High Speed Power Switching ADE-208-639A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SJ548 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gat.

Features

• Low on-resistance R DS(on) = 0.075Ω typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching. Outline TO
  –220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SJ548 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings
  –60 ±20
  –15
  –60
  –15 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2
  –15 19 30 150
  –55 to +150 EAR .