2SJ548 |
Part Number | 2SJ548 |
Manufacturer | Hitachi Semiconductor |
Description | 2SJ548 Silicon P Channel MOS FET High Speed Power Switching ADE-208-639A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • ... |
Features |
• Low on-resistance R DS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO –220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SJ548 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –15 –60 –15 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 –15 19 30 150 –55 to +150 EAR ... |
Document |
2SJ548 Data Sheet
PDF 52.51KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SJ540 |
Hitachi Semiconductor |
Silicon P-Channel MOSFET | |
2 | 2SJ541 |
Hitachi Semiconductor |
Silicon P-Channel MOSFET | |
3 | 2SJ542 |
Hitachi Semiconductor |
Silicon P-Channel MOSFET | |
4 | 2SJ543 |
Hitachi Semiconductor |
Silicon P-Channel MOSFET | |
5 | 2SJ544 |
Hitachi Semiconductor |
Silicon P-Channel MOSFET |