2SJ517 - Hitachi Semiconductor

2SJ517 Silicon P-Channel MOSFET

2SJ517 Silicon P Channel MOS FET High Speed Power Switching ADE-208-575B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.18 Ω typ. (at V GS =–4V, ID =–1A) • Low drive current • High speed switching • 2.5V gate drive devices. Outline UPAK 3 D 2 1 4 G S 1. Gate 2. Drain 3. Source 4. Drain 2SJ517 Absolute Maximum Ratings (Ta = 25°C).

Features

• Low on-resistance R DS(on) = 0.18 Ω typ. (at V GS =
  –4V, ID =
  –1A)
• Low drive current
• High speed switching
• 2.5V gate drive devices. Outline UPAK 3 D 2 1 4 G S 1. Gate 2. Drain 3. Source 4. Drain 2SJ517 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings
  –20 ±10
  –2
  –4
  –2 1 150
  –55 to +150 Unit V V A A A W °C °C 1. PW ≤ 100 µs, duty cycle ≤.