2SJ511 - Toshiba Semiconductor

2SJ511 Silicon P-Channel MOSFET

2SJ511 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV) 2SJ511 Chopper Regulator, DC−DC Converter and Motor Drive Applications l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 0.32 Ω (typ.) l High forward transfer admittance : |Yfs| = 1.4 S (typ.) l Low leakage current : IDSS = −100 µA (max) (VDS = −30 V) l Enhance.

Features

−5K1B Weight: 0.05 g (typ.) Marking Characteristics Symbol Max Unit Thermal resistance, channel to ambient Rth (ch−a) 250 °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm) Note 3: VDD = −25 V, Tch = 25°C (initial), L = 10 mH, RG = 25 Ω, IAR = −2 A Note 4: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. ZF (The two digits represent the part number.) 1 2002-08-09 Electrical Ch.