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2SJ517 |
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| Part Number | 2SJ517 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SJ517 Silicon P Channel MOS FET High Speed Power Switching ADE-208-575B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.18 Ω typ. (at V GS =–4V, ID =–1A) • Low drive current • Hi... |
| Features |
• Low on-resistance R DS(on) = 0.18 Ω typ. (at V GS = –4V, ID = –1A) • Low drive current • High speed switching • 2.5V gate drive devices. Outline UPAK 3 D 2 1 4 G S 1. Gate 2. Drain 3. Source 4. Drain 2SJ517 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings –20 ±10 –2 –4 –2 1 150 –55 to +150 Unit V V A A A W °C °C 1. PW ≤ 100 µs, duty cycle ≤... |
| Document |
 2SJ517 Data Sheet
PDF 43.88KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SJ511 |
Toshiba Semiconductor |
Silicon P-Channel MOSFET |
|
| 2 | 2SJ512 |
Toshiba Semiconductor |
Silicon P-Channel MOSFET |
|
| 3 | 2SJ516 |
Toshiba Semiconductor |
Silicon P-Channel MOSFET |
|
| 4 | 2SJ518 |
Hitachi Semiconductor |
Silicon P-Channel MOSFET |
|
| 5 | 2SJ50 |
Hitachi Semiconductor |
P-Channel MOSFET |
|