2SJ518 - Hitachi Semiconductor

2SJ518 Silicon P-Channel MOSFET

2SJ518 Silicon P Channel MOS FET High Speed Power Switching ADE-208-580B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.35 Ω typ. at (V GS = –10V, ID = –1A) • Low drive current • 4 V gete drive devices • High speed switching Outline UPAK 3 D 2 1 4 G S 1. Gate 2. Drain 3. Source 4. Drain 2SJ518 Absolute Maximum Ratings (Ta = 25°C.

Features

• Low on-resistance R DS(on) = 0.35 Ω typ. at (V GS =
  –10V, ID =
  –1A)
• Low drive current
• 4 V gete drive devices
• High speed switching Outline UPAK 3 D 2 1 4 G S 1. Gate 2. Drain 3. Source 4. Drain 2SJ518 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note2 Note1 Ratings
  –60 ±20
  –2
  –4
  –2
  –2 0.34 Unit V V A A A A mJ W °C °C EAR P.