2SJ512 - Toshiba Semiconductor

2SJ512 Silicon P-Channel MOSFET

2SJ512 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV) 2SJ512 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 1.0 Ω (typ.) l High forward transfer admittance : |Yfs| = 3.7 S (typ.) l Low leakage current : IDSS = −100 µA (max) (VDS = −250 V) l Enhancement−mode : V.

Features

mbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 4.16 62.5 °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = −50 V, Tch = 25°C (initial), L = 10.5 mH, RG = 25 Ω, IAR = −5 A Note 3: Repetitive rating; Pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-09-02 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut−off current Drain−source breakdown.