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2SJ512 |
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| Part Number | 2SJ512 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | 2SJ512 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV) 2SJ512 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS ... |
| Features |
mbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch−c) Rth (ch−a)
4.16 62.5
°C / W °C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = −50 V, Tch = 25°C (initial), L = 10.5 mH, RG = 25 Ω, IAR = −5 A Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution.
1 2002-09-02
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current Drain cut−off current Drain−source breakdown... |
| Document |
 2SJ512 Data Sheet
PDF 269.94KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SJ511 |
Toshiba Semiconductor |
Silicon P-Channel MOSFET |
|
| 2 | 2SJ516 |
Toshiba Semiconductor |
Silicon P-Channel MOSFET |
|
| 3 | 2SJ517 |
Hitachi Semiconductor |
Silicon P-Channel MOSFET |
|
| 4 | 2SJ518 |
Hitachi Semiconductor |
Silicon P-Channel MOSFET |
|
| 5 | 2SJ50 |
Hitachi Semiconductor |
P-Channel MOSFET |
|