2SD768(K) Silicon NPN Epitaxial Application Medium speed and power switching complementary pair with 2SB727(K) Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 3 kΩ (Typ) 200 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collecto.
IB1 =
–IB2 = 6 mA I C = 3 A, IB1 =
–IB2 = 6 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Turn off time Note: 1. Pulse test. hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 t on t off
Maximum Collector Dissipation Curve 60 Collector power dissipation PC (W) 30 Collector current IC (A) 10 3 1.0 0.3 0.1 0.03 0 50 100 Case temperature TC (°C) 150 1 3 10 30 100 300 1,000 Collector to emitter voltage VCE .
·With TO-220C package ·Complement to type 2SB727 ·DARLINGTON APPLICATIONS ·For medium speed and power switching applicat.
·High DC Current Gain- : hFE = 1000(Min)@ IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) ·Low Colle.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD761 |
ETC |
Transistor | |
2 | 2SD762 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | 2SD762 |
INCHANGE |
NPN Transistor | |
4 | 2SD762A |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SD764 |
INCHANGE |
NPN Transistor | |
6 | 2SD768K |
Hitachi Semiconductor |
Silicon NPN Transistor | |
7 | 2SD700 |
Toshiba |
NPN Transistor | |
8 | 2SD703A |
Mospec Semiconductor |
Power Transistors | |
9 | 2SD705 |
INCHANGE |
NPN Transistor | |
10 | 2SD706 |
INCHANGE |
NPN Transistor | |
11 | 2SD711 |
Fuji |
NPN Power Transistor | |
12 | 2SD711 |
INCHANGE |
NPN Transistor |