2SD764 - INCHANGE

2SD764 NPN Transistor

·With TO-3 Package ·High Voltage Capability ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for high voltage power switching TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltag.

Features

10mA; IC= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCB=1500V;IB= 0 VEB= 6V; IC=0 hFE DC Current Gain IC= 1A ; VCE= 5V tf Fall Time IC= 0.8A; IB1= 0.16A; IB2= 0.2A MIN MAX UNIT 6 V 600 V 5.0 V 1.5 V 0.5 mA 100 uA 8 36 1.5 μs NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contain.