·Low Collector Saturation Voltage ·High DC Current Gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector.
Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current ICEO Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain Switching times ton Turn-on Time tstg Storage Time tf Fall Time IC= 4A; IB= 40mA VCB=600V; IE=0 VCE= 500V;IB= 0 VEB= 10V; IC= 0 IC= 4A; VCE= 1.5V IC= 6A; VCE= 1.5V IC= 4A ,IB1= IB2= 40mA 1000 300 1.5 V 2.0 V 0.1 mA 0.5 mA 20 mA 3.0 μs 8.0 μs 5.0 μs NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any ti.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD700 |
Toshiba |
NPN Transistor | |
2 | 2SD703A |
Mospec Semiconductor |
Power Transistors | |
3 | 2SD706 |
INCHANGE |
NPN Transistor | |
4 | 2SD711 |
Fuji |
NPN Power Transistor | |
5 | 2SD711 |
INCHANGE |
NPN Transistor | |
6 | 2SD715 |
INCHANGE |
NPN Transistor | |
7 | 2SD716 |
Toshiba |
NPN Transistor | |
8 | 2SD716 |
SavantIC |
SILICON POWER TRANSISTOR | |
9 | 2SD716 |
INCHANGE |
NPN Transistor | |
10 | 2SD717 |
Toshiba |
NPN Transistor | |
11 | 2SD717 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SD717 |
INCHANGE |
NPN Transistor |