2SD706 - INCHANGE

2SD706 NPN Transistor

·Low Collector Saturation Voltage ·High DC Current Gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector.

Features

Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current ICEO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain Switching times ton Turn-on Time tstg Storage Time tf Fall Time IC= 4A; IB= 40mA VCB=345V; IE=0 VCE= 345V;IB= 0 VEB= 10V; IC= 0 IC= 4A; VCE= 1.5V IC= 4A ,IB1= IB2= 40mA 1000 1.5 V 2.0 V 0.1 mA 0.5 mA 20 mA 1.0 μs 8.0 μs 5.0 μs NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information containe.