2SD768 INCHANGE NPN Transistor Datasheet, en stock, prix

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2SD768

INCHANGE
2SD768
2SD768 2SD768
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Part Number 2SD768
Manufacturer INCHANGE
Description ·High DC Current Gain- : hFE = 1000(Min)@ IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 3A ·Complement to T...
Features C=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA, RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA, IC= 0 VCE(sat)-1★ Collector-Emitter Saturation Voltage IC= 3A, IB= 6mA VCE(sat)-2★ Collector-Emitter Saturation Voltage IC= 6A, IB= 60mA VBE(sat)-1★ Base-Emitter Saturation Voltage IC= 3A, IB= 6mA VBE(sat)-2★ Base-Emitter Saturation Voltage IC= 6A, IB= 60mA ICBO Collector Cutoff Current VCB= 120V, IE= 0 ICEO Collector Cutoff Current VCE= 100V; RBE= ∞ hFE★ DC Current Gain ★:Pulse Test Switching Times to...

Document Datasheet 2SD768 Data Sheet
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