·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High Power Dissipation- : PC= 80W(Max)@TC=25℃ ·Complement to Type 2SB557 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ·Recommended for 50W high-fidelity audio frequency amplifier output stage. ABSOLUTE .
X UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 2.5 V VBE(on) Base-Emitter On Voltage IC= 5A; VCE= 5V 2.0 V ICBO Collector Cutoff Current VCB= 60V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.1 mA hFE-1 DC Current Gain IC= 1A; VCE= 5V 40 140 hFE-2 DC Current Gain IC= 5A; VCE= 5V 20 COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz 170 pF fT Current-Gain—Bandwidth Product hFE-1 Classifications R .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD424 |
SavantIC |
SILICON POWER TRANSISTOR | |
2 | 2SD424 |
INCHANGE |
NPN Transistor | |
3 | 2SD425 |
SavantIC |
(2SD425 / 2SD426) SILICON POWER TRANSISTOR | |
4 | 2SD425 |
INCHANGE |
NPN Transistor | |
5 | 2SD426 |
Savantic |
(2SD425 / 2SD426) Silicon NPN Power Transistors | |
6 | 2SD426 |
INCHANGE |
NPN Transistor | |
7 | 2SD428 |
Inchange Semiconductor |
Silicon NPN Power Transistors | |
8 | 2SD400 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors | |
9 | 2SD400 |
LGE |
NPN Transistor | |
10 | 2SD400 |
LZG |
SILICON NPN TRANSISTOR | |
11 | 2SD400 |
Yukuto |
NPN Transistor | |
12 | 2SD400 |
Blue Rocket Electronics |
Silicon NPN transistor |