2SD428 - Inchange Semiconductor

2SD428 Silicon NPN Power Transistors

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High Power Dissipation- : PC= 60W(Max)@TC=25℃ ·Complement to Type 2SB558 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ·Recommended for 40W high-fidelity audio frequency amplifier output stage. ABSOLUTE.

Features

-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(on) Base-Emitter On Voltage IC= 5A; VCE= 5V ICBO Collector Cutoff Current VCB= 50V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain IC= 5A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz fT Current-Gain—Bandwidth Product IC= 1A; VCE= 5V  hFE-1 Classifications R O 40-80 70-140 2SD428 MIN TYP. MAX UNIT 100 V 5 V 2.5 V 2.0 V 0.