2SD426 - INCHANGE

2SD426 NPN Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High Power Dissipation- : PC= 100W(Max)@TC=25℃ ·Complement to Type 2SB556 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ·Recommended for high-fidelity audio frequency amplifier output stage. ABSOLUTE MAX.

Features

Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A VBE(on) Base-Emitter On Voltage IC= 7A; VCE= 5V ICBO Collector Cutoff Current VCB= 60V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 2A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz fT Current-Gain—Bandwidth Product IE= -2A; VCE= 5V  hFE Classifications R O 40-80 70-140 2SD426 MIN TYP. MAX UNIT 120 V 5 V 3.0 V 2.5 V 0.1 mA 0.1 mA 40 140 330 pF 6 MHz NO.