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2SD427 |
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| Part Number | 2SD427 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High Power Dissipation- : PC= 80W(Max)@TC=25℃ ·Complement to Type 2SB557 ·Minimum Lot-to-Lot variations for robust device performance and r... |
| Features |
X UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
120
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
2.5
V
VBE(on) Base-Emitter On Voltage
IC= 5A; VCE= 5V
2.0
V
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
0.1
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
0.1
mA
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
40
140
hFE-2
DC Current Gain
IC= 5A; VCE= 5V
20
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
170
pF
fT
Current-Gain—Bandwidth Product
hFE-1 Classifications
R
... |
| Document |
 2SD427 Data Sheet
PDF 204.99KB |
| Distributor | Stock | Price | Buy |
|---|
